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I D25
HiPerFET TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
IXFN 44N60
D
G
S
S
V DSS =
=
R DS(on) =
t rr ￡ 250 ns
600 V
44 A
130 m W
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B
V DSS
V DGR
V GS
V GSM
I D25
I DM
I AR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
600
600
± 20
± 30
44
176
44
V
V
V
V
A
A
A
E153432
G
S
D
S
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
60
3
5
600
-55 ... +150
150
-55 ... +150
mJ
J
V/ns
W
° C
° C
° C
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
? International standard package
? miniBLOC, with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
T J
V ISOL
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I ISOL ￡ 1 mA t=1s
-
2500
3000
° C
V~
V~
?
?
?
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
M d
Mounting torque
1.5/13 Nm/lb.in.
?
Fast intrinsic Rectifier
Terminal connection torque
1.5/13 Nm/lb.in.
Weight
30
g
Applications
? DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? Battery chargers
? Switched-mode and resonant-mode
power supplies
V DSS
V GH(th)
I GSS
I DSS
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 8 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
600
2.5
4.5
± 100
100
2
V
V
nA
m A
mA
? DC choppers
? Temperature and lighting controls
Advantages
? Easy to mount
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
130
m W
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98610B (7/00)
1-4
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